锂离子电池（LIB）已广泛用于固定式能源存储，如电动车和便携式电子产品，因为其有高能量密度和循环稳定性。 因为锂的资源限制，各种新能源存储系统正在作为替代LIB而广泛研究.钠离子可充电电池是超越LIB的新电池概念。与LIB相比，钠离子电池（SIB）有着更丰富的来源，更低的成本和更环保的电池系统。然而，与LIB相比，Na离子更大的离子半径使得用于SIB的阳极材料的开发仍然是相当大的挑战。 支持SIB的实际应用的一个关键问题是开发具有良好的循环稳定性和倍率性能的电极材料。锂离子电池虽然是目前发展前景最明朗的高能电池体系，但随着电动汽车、智能电网时代的到来,锂资源短缺将成为制约其发展的重要因素。因此,亟需发展下一代综合性能优异的电池体系。钠和锂是同主族元素，具有相似的物化性质,且钠资源丰富,成本低廉,在能源存储领域有可能成为锂离子电池的替代品之一。钠离子电池与锂离子电池相比具有三个明显的优势：（1）钠资源丰富和成本低廉；（2）钠离子电池的电势比锂离子电势高0.3～0.4 V，这样可以利用分解电势更低的溶剂和电解质盐，因此可供选择的电解质更多；（3）钠离子电池具有相对稳定的电化学性能，安全性更好。
离子电池的缺点也很明显，比如钠元素的相对原子质量比锂元素高，导致理论比容量不足锂的一半，同时钠离子半径比锂离子半径大70％，使得钠离子在电池材料中更不易于嵌入与脱出。对比了锂与钠两者的基本性质差异。此外，金属钠是非常活泼的金属，对水和氧气都非常敏感，这就要求比较苛刻的实验环境。目前，适合钠离子脱嵌的材料种类比较局限，制备和改性方法等还并不成熟，仍需要做进一步的研究探索。
已经报道了针对用于锂离子大体积膨胀材料设计的各种卵黄壳结构粒子，通过这种结构设计可以有效地提高循环稳定性和库仑效率。SnO2具有分别为1494mA h/g和1378mA h/g的高理论储电量用于锂和钠储存。长期以来，SnO2的大体积膨胀一直是被首要考虑的问题是由于SnO 2基负极材料的容量衰减。
目前，对于金属氧化物电极材料的研究探索主要集中在改善导电性，抑制充放电过程中体积变化，防止材料结构坍塌、颗粒团聚等方面
与纯SnO 2多孔纳米线相比，卵黄壳结构的多孔纳米线作为用于锂和钠离子存储的活性材料显著的改善了循环稳定性和库仑效率。对于锂离子存储，其在200mA /g 的电流密度下表现出1150mA h/g的高且稳定的容量，对于钠离子储存，50次循环后在50mA/g 的电流密度下表现出401mA h/g的容量。
由于其高容量（分别通过形成Li22Sn5和Na15Sn4合金，理论容量分别为991和847mA h/g），Sn是用于LIB和SIB两者的有前景的负极材料。然而，Sn在与Li和Na离子合金化时的大体积膨胀分别超过260％和400％。SnO 2负极可以提供比Sn的更高的理论容量（对于Li和Na离子存储，1494和1378mA h/g）。通常提出在锂化过程中，SnO 2首先基于SnO 2 4Li 4e→4Sn Li2O的转化反应转化为Sn，然后发生合金化反应（Sn 4.4Li 4.4e→Li22Sn5 ）。 同样，在SOD化过程中，SnO 2首先通过SnO 2→4Na 4e→4Sn Na2O的转化反应转化为Sn，然后发生合金化反应（Sn 3.75Na 3.75e→Na15Sn4）。由于与Sn有相同的体积膨胀问题，SnO 2遭受粉碎和电接触损耗，长期以来认为是SnO 2基负极材料的容量衰减的主要原因。此外，在断裂的SnO 2颗粒的表面上连续形成的新的固体电解质界面（SEI）层导致其低库伦效率和容量保持。为了克服这些问题，各种纳米结构已经用于SnO 2基电极，如纳米颗粒，纳米线，纳米片和纳米管来适应体积变化并增强电化学性能。 SnO2核壳结构和包括SnO2 /石墨烯，SnO2 /碳包覆和SnO2 /无定形碳的SnO2碳复合材料也被报道用于克服SnO2的内在限制。然而，在普通核壳结构上形成的SEI层是不稳定的，因为这些层不能承受在长时间放电/充电循环期间的大体积变化。另一方面，许多努力集中在通过用于大体积膨胀材料的纳米级设计来稳定SEI层。已经报道了在锂化和脱锂过程中具有用于电极材料膨胀的内部空隙空间的各种卵黄 - 壳结构颗粒，并且通过这种结构设计可以提高循环稳定性和库仑效率。与卵黄壳颗粒基电极相比，在层状结构化硅簇上形成的SEI膜的总量（二级结构由几个卵黄壳硅初级颗粒组成，然后二级结构被碳包覆）显示出显着降低。 由于二次结构具有与电解质接触的较低表面积（特定SEI区域）[46]，有助于更高的容量保持和库仑效率。层次化的蛋黄壳结构的优点可以扩展到SnO 2基材料用于Li和Na离子的存储。
以SnO 2多孔纳米线作为核心的卵黄壳结构以及在芯和外部碳壳之间作为缓冲层的空隙空间的SnO 2 @ void @ C复合材料已被制备并研究作为Li和Na半壳的阳极材料。 由于在锂化和钠化过程中由空隙空间提供的SnO 2的体积膨胀的缓冲，以及碳壳的高电子导电性。 与纯SnO 2多孔纳米线电极相比，该SnO 2 @ void @ C结构提供显着改善的循环性能和库仑效率。 这种结构设计也可以应用于在锂化和钠化期间具有相同大体积膨胀问题的其他电极材料。
通过以上思路设计实验，得到形貌表征优良、容量高、循环性能好的碳包覆氧化锡纳米片阵列。同时完善材料合成条件、物相表征、电化学性能测试等数据。最终得出结果，并撰写论文。
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